US Patent Issued to ETRON TECHNOLOGY on Aug. 11 for "Dynamic memory with long retention time" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,706,133, issued on Aug. 11, was assigned to ETRON TECHNOLOGY INC. (Hsinchu, Taiwan).

"Dynamic memory with long retention time" was invented by Chao-Chun Lu (Taipei City, Taiwan), Bor-Doou Rong (Hsinchu County, Taiwan) and Chun Shiah (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The invention relates to DRAM with sustainable storage architecture. The DRAM comprises a DRAM cell with an access transistor and a storage capacitor, and a word-line coupled to a gate terminal of the access transistor. During the period between the word-line being selected to turn on the access transistor and the word line being unselected to turn off the ...