US Patent Issued to ETRON TECHNOLOGY, INVENTION AND COLLABORATION LABORATORY on May 19 for "Semiconductor device structure having a metal layer positioned under the semiconductor substrate" (Taiwanese Inventor)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,633,321, issued on May 19, was assigned to ETRON TECHNOLOGY INC. (Hsinchu, Taiwan) and INVENTION AND COLLABORATION LABORATORY PTE. LTD. (Singapore).

"Semiconductor device structure having a metal layer positioned under the semiconductor substrate" was invented by Chao-Chun Lu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure includes a silicon substrate, a transistor, and an interconnection. The silicon substrate has a silicon surface. The transistor includes a gate structure, a first conductive region, a second conductive region, and a channel under the silicon surface. The interconnection is extended beyon...