US Patent Issued to Etron Technology, Invention And Collaboration Laboratory on April 7 for "Transistor with low leakage currents and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,765, issued on April 7, was assigned to Etron Technology Inc. (Hsinchu, Taiwan) and Invention And Collaboration Laboratory Pte. Ltd. (Singapore).

"Transistor with low leakage currents and manufacturing method thereof" was invented by Chao-Chun Lu (Taipei City, Taiwan) and Weng-Dah Ken (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor with low leakage currents includes a substrate, a gate, spacers, pad dielectric layers, a source, and a drain. The gate is formed above a gate dielectric layer, wherein the gate dielectric layer has a first dielectric constant. The spacers have a second dielectric constant. The pad dielec...