US Patent Issued to ENKRIS SEMICONDUCTOR on Sept. 22 for "Epitaxial structure of light-emitting device and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,488, issued on Sept. 22, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China).

"Epitaxial structure of light-emitting device and manufacturing method thereof" was invented by Weihua Liu (Suzhou, China) and Kai Cheng (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An epitaxial structure of a light-emitting device and a manufacturing method thereof are provided. The epitaxial structure of the light-emitting device includes a first semiconductor layer, an active region and a second semiconductor layer sequentially stacked; where the active region includes at least one group of a barrier layer and a quantum well layer which are stack...