US Patent Issued to ENKRIS SEMICONDUCTOR on Oct. 6 for "Manufacturing method of vertical cavity surface emitting laser" (Chinese Inventor)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,756,159, issued on Oct. 6, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China).

"Manufacturing method of vertical cavity surface emitting laser" was invented by Kai Cheng (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A manufacturing method of a vertical cavity surface emitting laser is provided. The vertical cavity surface emitting laser includes a first reflector, a first semiconductor layer, an active layer, a second semiconductor layer, an oxide layer, and a second reflector sequentially stacked. The conductivity type of the first semiconductor layer is opposite to that of the second semiconductor layer. The oxide layer includes ...