US Patent Issued to ENKRIS SEMICONDUCTOR on Nov. 3 for "Method of manufacturing semiconductor structure and semiconductor structure" (Chinese Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,386, issued on Nov. 3, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China).

"Method of manufacturing semiconductor structure and semiconductor structure" was invented by Kai Cheng (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "This disclosure provides a method for manufacturing a semiconductor structure, which includes: providing a substrate, forming a mask layer on the substrate, where the mask layer is provided with an opening exposing the substrate; by using the mask layer as a mask, selectively growing a first semiconductor epitaxial layer at the opening, where the first semiconductor epitaxial layer does not cover a surface ...