US Patent Issued to ENKRIS SEMICONDUCTOR on Nov. 3 for "GaN-based laser and manufacturing method therefor" (Chinese Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,785,362, issued on Nov. 3, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China).

"GaN-based laser and manufacturing method therefor" was invented by Kai Cheng (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A GaN-based laser and a manufacturing method thereof are provided in this present disclosure. The GaN-based laser includes: an epitaxial substrate unit; and a light-emitting unit located on the epitaxial substrate unit, where the light-emitting unit includes an active layer unit, which is arranged parallel to the epitaxial substrate unit; the light emitting unit includes a pair of first sidewall and second sidewall, which are opposi...