US Patent Issued to ENKRIS SEMICONDUCTOR on March 17 for "Epitaxial substrate having a protective edge layer and manufacturing method therefor" (Chinese Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,874, issued on March 17, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China).

"Epitaxial substrate having a protective edge layer and manufacturing method therefor" was invented by Kai Cheng (Suzhou, China) and Peng Xiang (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a substrate and a manufacturing method therefor. The substrate includes a silicon substrate and a protective layer, the silicon substrate includes a middle part and an edge part, and a thickness of the middle part is greater than a thickness of the edge part. The middle part has a to-be-grown surface, and a crystal orientation of t...