ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,301, issued on July 21, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China).
"Diode and manufacturing method thereof" was invented by Kai Cheng (Suzhou, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a diode and a manufacturing method thereof. The diode includes: a first substrate, the first substrate being an N-type doped substrate with a doping concentration equal to or greater than 1x1018 cm-3; a metal atomic layer located on a first surface of the first substrate; an epitaxial structure located on the metal atomic layer; a first electrode located on the epitaxial structure; and a second electrode located on a second sur...