ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,867, issued on July 14, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China).
"Composite substrate and method for manufacturing the same, and semiconductor device structure" was invented by Kai Cheng (Suzhou, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a composite substrate and a method for manufacturing the same, and a semiconductor device structure. In this application, after a buffer layer and an epitaxial growth layer are sequentially formed on a support substrate, the epitaxial growth layer is bonded on a target substrate of which a surface has a bonding layer, and the support substrate and the buffer layer are remov...