US Patent Issued to ENKRIS SEMICONDUCTOR on Aug. 4 for "Light emitting structures formed in opening in a mask and preparation method therefor" (Chinese Inventor)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,849, issued on Aug. 4, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China).

"Light emitting structures formed in opening in a mask and preparation method therefor" was invented by Kai Cheng (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a light emitting structure and a preparation method therefor. The method includes: forming a mask layer on a n-type substrate, disposing a plurality of openings in the mask layer; and forming a light emitting unit in each of the plurality of openings, including: forming a metal atomic layer in the opening; forming an n-type semiconductor layer on the metal atomic layer, and forming a...