US Patent Issued to ENKRIS SEMICONDUCTOR on Aug. 25 for "Multi-quantum well semiconductor structure including a scandium nitride insertion layer" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,914, issued on Aug. 25, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China).

"Multi-quantum well semiconductor structure including a scandium nitride insertion layer" was invented by Weihua Liu (Suzhou, China) and Liangfang Sun (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes: a first semiconductor layer, a multiple quantum well layers formed on the first semiconductor layer, where the multiple quantum well layer includes a plurality of quantum barrier layers and a plurality of quantum well layers alternately arranged; an insertion layer formed on each of the plurality of quantum well layers; and...