US Patent Issued to ENKRIS SEMICONDUCTOR on April 21 for "Semiconductor structure and method for manufacturing semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,755, issued on April 21, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China).

"Semiconductor structure and method for manufacturing semiconductor structure" was invented by Liyang Zhang (Suzhou, China) and Kai Cheng (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a semiconductor structure and a method for manufacturing a semiconductor structure, the method includes: forming a first transition layer, a protection layer and an active structure layer sequentially epitaxially on a side of a growth substrate, where a surface, away from the growth substrate, of the first transition layer is a two-dimensional flat surface...