US Patent Issued to EMEMORY TECHNOLOGY on Feb. 17 for "Erasable programmable non-volatile memory cell" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,556,184, issued on Feb. 17, was assigned to EMEMORY TECHNOLOGY INC. (Hsin-Chu, Taiwan).

"Erasable programmable non-volatile memory cell" was invented by Wein-Town Sun (Hsinchu County, Taiwan), Woan-Yun Hsiao (Hsinchu County, Taiwan), Wei-Ren Chen (Hsinchu County, Taiwan) and Hsueh-Wei Chen (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile memory cell includes a p-type well region, a first n-type doped region, a second n-type doped region, a first gate structure, a second gate structure, a third gate structure and a protecting layer. The first n-type doped region and the second n-type doped region are formed under a su...