US Patent Issued to Elmos Semiconductor, Hyundai Mobis on Aug. 25 for "Device and method for inhibiting a substrate current in an IC semiconductor substrate" (German Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,829, issued on Aug. 25, was assigned to Elmos Semiconductor SE (Leverkusen, Germany) and Hyundai Mobis Co. Ltd. (Seoul, South Korea).

"Device and method for inhibiting a substrate current in an IC semiconductor substrate" was invented by Fikret Abaza (Dortmund, Germany), Andre Sudhaus (Dortmund, Germany), Uwe Friemann (Dortmund, Germany), Andreas Friesen (Dortmund, Germany), Mats Schmalhorst (Dortmund, Germany) and Marco Liedtke (Dortmund, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "Devices and methods prevent injection of a substrate current into the substrate Sub of a CMOS circuit. The devices detect the potential of a contact of the in...