US Patent Issued to ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE on Sept. 8 for "Nitride-based high electron mobility transistor and manufacturing method thereof" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,194, issued on Sept. 8, was assigned to ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE (Daejeon, South Korea).

"Nitride-based high electron mobility transistor and manufacturing method thereof" was invented by Hyun Wook Jung (Daejeon, South Korea), Seong Il Kim (Daejeon, South Korea), Hae Cheon Kim (Daejeon, South Korea), Youn Sub Noh (Daejeon, South Korea), Ho Kyun Ahn (Daejeon, South Korea), Sang Heung Lee (Daejeon, South Korea), Jong Won Lim (Daejeon, South Korea), Sung Jae Chang (Daejeon, South Korea) and Il Gyu Choi (Daejeon, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a nitride-based high electron mobility tr...