ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,514, issued on July 28, was assigned to Efficient Power Conversion Corp. (El Segundo, Calif.).

"GaN device with uniform electric field" was invented by Jianjun Cao (Torrance, Calif.), Wen-Chia Liao (Torrance, Calif.), Muskan Sharma (Torrance, Calif.), Robert Strittmatter (Tujunga, Calif.) and Alexander Lidow (Topanga, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An enhancement mode GaN transistor that includes a multi-region field plate which partially overlaps the gate and partially overlaps a barrier offset layer. The multi-region field plate includes a section of increased height with respect to the channel layer over the portion of the ...