US Patent Issued to EBARA on March 24 for "Method of manufacturing barrier-metal-free metal interconnect structure, and barrier-metal-free metal interconnect structure" (Japanese Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,480, issued on March 24, was assigned to EBARA Corp. (Tokyo).

"Method of manufacturing barrier-metal-free metal interconnect structure, and barrier-metal-free metal interconnect structure" was invented by Takeshi Iizumi (Tokyo), Ryota Koshino (Tokyo) and Shinro Ota (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention relates to a metal interconnect structure containing no barrier metal and a method of manufacturing the metal interconnect structure. The method includes: filling at least a first interconnect trench with an intermetallic compound by depositing the intermetallic compound on an insulating layer having the first in...