US Patent Issued to DISCO on Sept. 22 for "Processing method of bonded wafer" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,579, issued on Sept. 22, was assigned to DISCO Corp. (Tokyo).

"Processing method of bonded wafer" was invented by Hayato Tanaka (Tokyo) and Hayato Iga (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of processing a bonded wafer includes a modified layer forming step of applying a laser beam to a first wafer while positioning a focused spot FP of the laser beam within the first wafer to form a modified layer and cracks developed from the modified layer and extending toward an outer circumferential portion of the first wafer along the bonding layer, and a step of grinding the reverse side of the first wafer to thin it. In the modified ...