ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,642, issued on March 31, was assigned to DISCO Corp. (Tokyo).
"Method of processing a wafer" was invented by Hayato Iga (Tokyo) and Kazuya Hirata (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of processing a wafer includes forming a bonded wafer assembly by bonding one of opposite surfaces of a first wafer to a second wafer, the first wafer having a device region and an outer circumferential excessive region, applying a laser beam to the first wafer while positioning a focused spot of the laser beam radially inwardly from the outer circumferential edge of the first wafer, on an inclined plane that is progressively closer to the one...