US Patent Issued to DISCO on July 7 for "Method of manufacturing monocrystalline silicon substrate" (Japanese Inventor)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,673,389, issued on July 7, was assigned to DISCO Corp. (Tokyo).

"Method of manufacturing monocrystalline silicon substrate" was invented by Hayato Iga (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "The application of laser beams to at least two of a plurality of regions extending along a predetermined direction and the changing of at least two regions to which the laser beams are to be applied are alternately repeated to form peel-off layers in the ingot that include a plurality of modified portions positioned at a predetermined depth from the surface of the workpiece and cracks developed from the respective modified portions. The laser beams for ...