ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,713,858, issued on Aug. 18, was assigned to DISCO Corp. (Tokyo).
"Wafer processing method" was invented by Hayato Iga (Tokyo) and Kazuya Hirata (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A wafer processing method includes bonding one surface of a first wafer to a second wafer, the first wafer having a device region on the one surface, a peripheral surplus region, and a chamfered peripheral edge; forming an annular modified layer along a boundary of the device region and the peripheral surplus region by applying a laser beam to the first wafer from the other surface of the first wafer with a focal point of the laser beam placed at the boundary...