ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,350, issued on Feb. 17, was assigned to DENSO Corp. (Kariya, Japan).
"Field-effect transistor and method for manufacturing same" was invented by Yuichiro Matsuura (Kariya, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A field-effect transistor includes: a semiconductor substrate having trenches; and a gate electrode disposed in the trenches. Breakdown voltage regions are provided in each inter-trench range. The breakdown voltage regions are arranged to form rows extending in a first direction intersecting the trenches. The rows are arranged at interval in a second direction parallel to the trenches. Each of the breakdown voltage regions exten...