US Patent Issued to DENSO on Aug. 4 for "Semiconductor device and manufacturing method of semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,741, issued on Aug. 4, was assigned to DENSO Corp. (Kariya-city, Japan).

"Semiconductor device and manufacturing method of semiconductor device" was invented by Naoki Tega (Kariya-city, Japan) and Takuma Katano (Kariya-city, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor layer in a semiconductor device includes a drift region of a first conductivity type, a body region of a second conductivity type disposed above the drift region, a source region of the first conductivity type disposed above the body region, and a first contact region and a second contact region each having a higher concentration of second conductivity-type impu...