US Patent Issued to DENSO, TOYOTA JIDOSHA, MIRISE Technologies on Sept. 8 for "Nitride semiconductor device and method of manufacturing nitride semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,228, issued on Sept. 8, was assigned to DENSO Corp. (Kariya, Japan), TOYOTA JIDOSHA K.K. (Toyota, Japan) and MIRISE Technologies Corp. (Nisshin, Japan).

"Nitride semiconductor device and method of manufacturing nitride semiconductor device" was invented by Kazuki Ikeyama (Nisshin, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nitride semiconductor device includes: a conductive layer; a protruding region of a nitride semiconductor provided on at least a part of an upper surface of the conductive layer; and an n-type drift layer provided above the conductive layer. The drift layer includes a tapered region having an upward tapered shape above...