US Patent Issued to DENSO, TOYOTA JIDOSHA, MIRISE Technologies on July 28 for "Silicon carbide wafer and silicon carbide semiconductor device including the same" (Japanese Inventor)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,506, issued on July 28, was assigned to DENSO Corp. (Kariya-city, Japan), TOYOTA JIDOSHA K.K. (Toyota, Japan) and MIRISE Technologies Corp. (Nisshin, Japan).

"Silicon carbide wafer and silicon carbide semiconductor device including the same" was invented by Hideyuki Uehigashi (Nisshin, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide wafer includes a substrate made of silicon carbide and an epitaxial layer made of silicon carbide and disposed on the substrate. A concentration of carbon vacancies in the substrate and the epitaxial layer continuously decreases from the substrate toward the epitaxial layer. The concentration of th...