US Patent Issued to DENSO, TOYOTA JIDOSHA, MIRISE Technologies on July 14 for "Field effect transistor" (Japanese Inventor)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,829, issued on July 14, was assigned to DENSO Corp. (Kariya-city, Japan), TOYOTA JIDOSHA K.K. (Toyota, Japan) and MIRISE Technologies Corp. (Nisshin, Japan).

"Field effect transistor" was invented by Ryota Suzuki (Nisshin, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a field effect transistor, trench lower layers are disposed directly below corresponding trenches. Deep layers of p-type extend along a first direction intersecting the trenches and are arranged at intervals along a second direction orthogonal to the first direction. A drain-side layer of n-type is distributed from a position in contact with a lower surface of a body layer to...