ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,534, issued on June 16, was assigned to DENSO Corp. (Kariya-city, Japan), TOYOTA JIDOSHA K.K. (Toyota, Japan), MIRISE Technologies Corp. (Nisshin, Japan) and HAMAMATSU PHOTONICS K.K. (Hamamatsu, Japan).
"Method for manufacturing semiconductor device" was invented by Kozo Kato (Nisshin, Japan) and Daisuke Kawaguchi (Hamamatsu, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor device, includes: applying a laser beam to a plane extending at a predetermined depth in a semiconductor substrate from a second main surface side of the semiconductor substrate opposite to a first main surface side on which a device...