US Patent Issued to DB HiTek on May 19 for "Power semiconductor device and manufacturing method thereof" (South Korean Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,206, issued on May 19, was assigned to DB HiTek Co. Ltd. (Bucheon-si, South Korea).

"Power semiconductor device and manufacturing method thereof" was invented by Ji Houn Jung (Seoul, South Korea), Dae Il Kim (Cheongju-si, South Korea), Han Seok Ko (Seoul, South Korea) and Ung Bi Son (Bucheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A power semiconductor device and its manufacturing method are proposed. Specifically, the device features a plurality of guard rings formed on the separation space between the gate electrode and drain electrode. These guard rings inject holes into the channel layer, which capture trapped electrons and...