US Patent Issued to DB HiTek on May 19 for "Deep trench isolation including air gap and embossed portion and method of manufacturing same" (South Korean Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,490, issued on May 19, was assigned to DB HiTek Co. Ltd. (Bucheon-si, South Korea).

"Deep trench isolation including air gap and embossed portion and method of manufacturing same" was invented by Han Seok Ko (Seoul, South Korea), Dae Il Kim (Cheongju-si, South Korea), Ji Houn Jung (Seoul, South Korea) and Ung Bi Son (Bucheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Proposed are a semiconductor device and a method of manufacturing the same, in which a first device isolation region includes a Pre-DTI region and a DTI region, wherein the DTI region is configured to be physically distinguishable by having an extension part with a su...