US Patent Issued to DB HiTek on June 16 for "Semiconductor device including MOSFET region and diode region and manufacturing method thereof" (South Korean Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,302, issued on June 16, was assigned to DB HiTek Co. Ltd. (Bucheon, South Korea).

"Semiconductor device including MOSFET region and diode region and manufacturing method thereof" was invented by Seung Hyun Kim (Bucheon-si, South Korea), Hee Bae Lee (Bucheon-si, South Korea), Jae Yuhn Moon (Bucheon-si, South Korea) and Soon Jong Park (Bucheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a semiconductor device (1) including a MOSFET region and an integrated diode region, and a manufacturing method thereof. More particularly, a semiconductor device (1) including a silicon carbide (SiC) MOSFET region and an integrated Sch...