US Patent Issued to DAEGU GYEONGBUK INSTITUTE OF SCIENCE AND TECHNOLOGY on April 21 for "Non-volatile memory device and method for driving same" (South Korean Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,559, issued on April 21, was assigned to DAEGU GYEONGBUK INSTITUTE OF SCIENCE AND TECHNOLOGY (Daegu, South Korea).

"Non-volatile memory device and method for driving same" was invented by Hyeon Jun Lee (Daegu, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile memory device according to various embodiments of the present invention is characterized in that the non-volatile memory device includes a substrate, a first electrode disposed on the substrate, an insulating layer contacting the first electrode, a semiconductor layer contacting the insulating layer, and a second electrode contacting the semiconductor layer, and is driv...