US Patent Issued to CXMT on Nov. 3 for "Memory" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,857, issued on Nov. 3, was assigned to CXMT Corp. (Hefei City, China).

"Memory" was invented by Weibing Shang (Hefei City, China), Xiangyun Han (Hefei City, China), Yifei Luo (Hefei City, China), Xindi Wang (Hefei City, China) and Hangtian Ba (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a memory. In the memory, each bit line in a non-edge memory array tile is coupled to a corresponding stress test power supply, and a stress test power supply corresponding to a first bit line is different from a stress test power supply corresponding to an adjacent second bit line. A first bit line in an edge memory...