US Patent Issued to CSMC TECHNOLOGIES FAB2 on May 26 for "Super-Beta bipolar junction transistor and manufacturing method therefor" (Chinese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,839, issued on May 26, was assigned to CSMC TECHNOLOGIES FAB2 Co. LTD. (Wuxi, China).

"Super-Beta bipolar junction transistor and manufacturing method therefor" was invented by Yongshun Li (Wuxi, China), Huajun Jin (Wuxi, China) and Liang Song (Wuxi, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A manufacturing method for a super-Beta bipolar junction transistor includes providing a substrate, and forming a first conductive type isolation buried layer and a first conductive type doped layer based on the substrate. The isolation buried layer is located at a bottom of the doped layer. The method also includes forming a second conductive type bas...