US Patent Issued to CSMC TECHNOLOGIES FAB2, SOUTHEAST UNIVERSITY on May 5 for "DMOS device having junction field plate and manufacturing method therefor" (Chinese Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,622,009, issued on May 5, was assigned to CSMC TECHNOLOGIES FAB2 Co. LTD. (Wuxi, China) and SOUTHEAST UNIVERSITY (Nanjing, China).

"DMOS device having junction field plate and manufacturing method therefor" was invented by Feng Lin (Wuxi, China), Chaoqi Xu (Wuxi, China), Shuxian Chen (Wuxi, China), Chunxu Li (Wuxi, China), Li Lu (Nanjing, China), Siyang Liu (Nanjing, China) and Weifeng Sun (Nanjing, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a DMOS device with a junction field plate and its manufacturing method. A drain region is located on a surface of a semiconductor substrate. A source region is located in the ...