US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES on Sept. 22 for "Test vehicle and test method for microelectronic devices" (French Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,609, issued on Sept. 22, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris).

"Test vehicle and test method for microelectronic devices" was invented by Rene Escoffier (Grenoble Cedex, France) and Blend Mohamad (Grenoble Cedex, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A test structure for a buried gate transistor includes a substrate, a first test contact located on one side of a first transistor contact, a second test contact located on one side of a second transistor contact, and a layer buried in the substrate, having a doping greater than or equal to 1018 cm-3, and having a face which is tangent t...