US Patent Issued to Commissariat a l'Energie Atomique et aux Energies Alternatives on Nov. 3 for "Optoelectronic device including active photosensitive semiconductor layer totally filling all free spaces laterally extending between inorganic light-emitting diodes and manufacturing method therefor" (French Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,493, issued on Nov. 3, was assigned to Commissariat a l'Energie Atomique et aux Energies Alternatives (Paris).

"Optoelectronic device including active photosensitive semiconductor layer totally filling all free spaces laterally extending between inorganic light-emitting diodes and manufacturing method therefor" was invented by Francois Templier (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing an optoelectronic device including the following successive steps: a) forming, on an integrated control circuit previously formed inside and on top of a semiconductor substrate, a plurality of inorganic light-emitting di...