US Patent Issued to Commissariat a l'Energie Atomique et aux Energies Alternatives on May 12 for "Phase change memory device" (French Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,574, issued on May 12, was assigned to Commissariat a l'Energie Atomique et aux Energies Alternatives (Paris).

"Phase change memory device" was invented by Gabriele Navarro (Grenoble, France), Chiara Sabbione (Grenoble, France), Guillaume Bourgeois (Grenoble, France) and Anna-Lisa Serra (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A phase change memory device comprising, between first and second electrodes: a first layer of a phase change material; and a second germanium nitride-based layer, in contact with the first layer, the nitrogen percentage in the second layer being between 20% and 35%, and the second layer having a channel...