ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,561, issued on June 2, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris).
"SRAM memory with random deterministic initialization" was invented by Jean-Philippe Noel (Grenoble, France) and Bastien Giraud (Grenoble, France).
According to the abstract* released by the U.S. Patent & Trademark Office: "Static random access memory device comprising a matrix in which each column is associated with an initialization circuit (100i, 100j), provided with a stage (110) for drawing a random value (110), configured to, following the reception of the initialization activation signal (RAND_ENABLE), produce, in a random manner, respectively a first potential at ...