ALEXANDRIA, Va., June 2 -- United States Patent no. 12,645,927, issued on June 2, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris).
"Non-volatile memories with mixed OxRAM/FeRAM technologies" was invented by Francois Rummens (Grenoble, France), Thomas Mesquida (Grenoble, France), Laurent Grenouillet (Grenoble, France), Alexandre Valentian (Grenoble, France) and Elisa Vianello (Grenoble, France).
According to the abstract* released by the U.S. Patent & Trademark Office: "A data storage circuit includes a matrix array of memory cells. The memory cells are configurable and non-volatile. Each one is intended to operate in either one of two operating configurations; the first operating configuration corres...