ALEXANDRIA, Va., June 16 -- United States Patent no. 12,658,233, issued on June 16, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris).
"Circuit for non-destructive reading of ferroelectric memories" was invented by Olivier Billoint (Grenoble, France) and Laurent Grenouillet (Grenoble, France).
According to the abstract* released by the U.S. Patent & Trademark Office: "A data storage circuit includes a matrix of memory cells such that each memory cell comprises: a read circuit associated with at least one memory cell, comprising: a capacitive transimpedance amplifier stage configured to read a datum stored in a memory cell; the capacitive transimpedance amplifier stage comprising: an operational amplifi...