US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES on July 28 for "Process for manufacturing a phase change material with a crystallographic structure of layers separated by van der Waals pseudo-gaps" (French Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,689, issued on July 28, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris).

"Process for manufacturing a phase change material with a crystallographic structure of layers separated by van der Waals pseudo-gaps" was invented by Damien Terebenec (Grenoble Cedex, France) and Pierre-Olivier Noe (Grenoble Cedex, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a phase change stack having a crystallographic structure made of layers separated by van der Waals pseudo-gaps, may include: providing a substrate; forming the stack on the substrate, including (i) forming the first layer, and (ii)...