US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES on Feb. 24 for "Electrolyte-based field effect transistor and associated method of fabrication" (French Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,560,574, issued on Feb. 24, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris).

"Electrolyte-based field effect transistor and associated method of fabrication" was invented by Ngoc-Anh Nguyen (Grenoble Cedex, France) and Sami Oukassi (Grenoble Cedex, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "An electrolyte-based field effect transistor includes a dielectric layer; a source electrode and a drain electrode located on top of the dielectric layer; the electrolyte-based transistor further including an electrolyte layer between and on top of the source electrode and the drain electrode, the part of the electrol...