US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES on Aug. 25 for "Transistor control device and control method" (French Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,767, issued on Aug. 25, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris).

"Transistor control device and control method" was invented by Bastien Giraud (Grenoble Cedex, France), Francois Andrieu (Grenoble Cedex, France) and Yasser Moursy (Grenoble Cedex, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "An FDSOI transistor control device includes a plurality of first wells having a first type of conductivity, each first well being associated with a group of transistors, and at least one second well having a second type of conductivity, formed under and around the first wells (21). A bias circuit is configure...