US Patent Issued to CITY UNIVERSITY OF HONG KONG on Sept. 15 for "Gain-enhanced low-profile dielectric resonator antenna with a loading metal" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,658, issued on Sept. 15, was assigned to CITY UNIVERSITY OF HONG KONG (Kowloon, Hong Kong).

"Gain-enhanced low-profile dielectric resonator antenna with a loading metal" was invented by Kwok Wa Leung (Kowloon Tong, Hong Kong), Zhili Su (Kowloon Tong, Hong Kong) and Kai Lu (Guangzhou, Hong Kong).

According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate-integrated dielectric resonator, which includes a first substrate layer having a first dielectric constant, and a plurality of metallic patches on a first side of the first substrate layer. The plurality of metallic patches is separated from each other, and is shorted to ground. A dielectric resonator...