ALEXANDRIA, Va., July 16 -- United States Patent no. 12,669,538, issued on June 30, was assigned to CITY UNIVERSITY OF HONG KONG (Kowloon, Hong Kong).
"Apparatus for measuring a gate leakage current of a transistor" was invented by Shu Hung Henry Chung (Hong Kong, Hong Kong) and Ho Tin Tang (Tsuen Wan, Hong Kong).
According to the abstract* released by the U.S. Patent & Trademark Office: "An apparatus for measuring a gate leakage current of a MOSFET. The apparatus includes a current mirror adapted to be connected to a gate of a MOSFET, a gate driver adapted to generate a driving signal for the MOSFET, and a sensing resistor connected to the current mirror. An input current path of the current mirror is adapted to receive a gate leakage cu...