US Patent Issued to City University of Hong Kong on Aug. 25 for "Versatile anti-ambipolar phototransistors based on mixed-dimensional heterojunctions" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,877, issued on Aug. 25, was assigned to City University of Hong Kong (Hong Kong).

"Versatile anti-ambipolar phototransistors based on mixed-dimensional heterojunctions" was invented by Chung Yin Johnny Ho (Hong Kong), Wei Wang (Hong Kong), Weijun Wang (Hong Kong) and You Meng (Hong Kong).

According to the abstract* released by the U.S. Patent & Trademark Office: "Mixed-dimensional heterostructure nano-devices with multi-functionality for use in semiconductors. Specifically, a gate-tunable and anti-ambipolar phototransistor is devised based on 1D p-type GaAsSb nanowire/2D n-type MoS2 nanoflake mixed-dimensional van der Waals (vdW) heterojunctions. Methods of making the mixed-dimen...