US Patent Issued to City University of Hong Kong on Aug. 11 for "Highly-efficient full van der Waals 1D p-Te/2D n-Bi 2 O 2 Se heterodiodes with nanoscale ultra-photosensitive channels" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,729, issued on Aug. 11, was assigned to City University of Hong Kong (Hong Kong).

"Highly-efficient full van der Waals 1D p-Te/2D n-Bi 2 O 2 Se heterodiodes with nanoscale ultra-photosensitive channels" was invented by Chung Yin Johnny Ho (Hong Kong), Weijun Wang (Hong Kong), You Meng (Hong Kong) and Wei Wang (Hong Kong).

According to the abstract* released by the U.S. Patent & Trademark Office: "Continuous miniaturization of semiconductor devices is the key to boosting modern electronics development. However, such downscaling strategy has been rarely utilized in photoelectronics and photovoltaics. Here, in this work, a full-vdWs 1D p-Te/2D n-Bi2O2Se heterodiode with a rationally...