US Patent Issued to CHENGDU PBM TECHNOLOGY on March 3 for "High-density three-dimensional multilayer memory and fabrication method" (American, Chinese Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,633, issued on March 3, was assigned to CHENGDU PBM TECHNOLOGY LTD. (Chengdu, China).

"High-density three-dimensional multilayer memory and fabrication method" was invented by Jack Zezhong Peng (San Jose, Calif.) and Ke Wang (Chengdu, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a high-density three-dimensional multilayer memory and a preparation method. The preparation method of the memory comprises the following steps: firstly forming a basic structure body; secondly, slotting the basic structure body; thirdly, forming a preset number of memory cell holes in the a segmentation groove, an insulating medium be...