US Patent Issued to CHANGXIN MEMORY TEHNOLOGIES on June 30 for "Semiconductor structure having a ladder contact structure" (Chinese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,277, issued on June 30, was assigned to CHANGXIN MEMORY TEHNOLOGIES INC. (Hefei City, China).

"Semiconductor structure having a ladder contact structure" was invented by Hong Wang (Hefei City, China) and Xiaojie Li (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure discloses a semiconductor structure and a method for fabricating the semiconductor structure. The semiconductor structure includes a plurality of word lines and a plurality of bit lines; ladder structure, including multiple steps, each step includes a first part which extends along the first direction, and a second part which extends along the second ...